Sb enhancement of lateral superlattice formation in GaInP
Identifieur interne : 010393 ( Main/Repository ); précédent : 010392; suivant : 010394Sb enhancement of lateral superlattice formation in GaInP
Auteurs : RBID : Pascal:01-0100500Descripteurs français
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- 8105E, 8115K, 7855C, 7866F, 6865C, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Croissance semiconducteur, Méthode MOCVD, Epitaxie phase vapeur, Photoluminescence, Bande interdite, TEM, Microscopie force atomique, Antimoine, Superréseau semiconducteur.
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Abstract
Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Sb enhancement of lateral superlattice formation in GaInP</title><author><name sortKey="Fetzer, C M" uniqKey="Fetzer C">C. M. Fetzer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Lee, R T" uniqKey="Lee R">R. T. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Jun, S W" uniqKey="Jun S">S. W. Jun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Lee, S M" uniqKey="Lee S">S. M. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kwanju Institute of Science and Technology, Kwanju 500-712, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Kwanju Institute of Science and Technology, Kwanju 500-712</wicri:regionArea><wicri:noRegion>Kwanju 500-712</wicri:noRegion></affiliation></author><author><name sortKey="Seong, T Y" uniqKey="Seong T">T. Y. Seong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kwanju Institute of Science and Technology, Kwanju 500-712, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Kwanju Institute of Science and Technology, Kwanju 500-712</wicri:regionArea><wicri:noRegion>Kwanju 500-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0100500</idno><date when="2001-03-05">2001-03-05</date><idno type="stanalyst">PASCAL 01-0100500 AIP</idno><idno type="RBID">Pascal:01-0100500</idno><idno type="wicri:Area/Main/Corpus">011B12</idno><idno type="wicri:Area/Main/Repository">010393</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony</term><term>Atomic force microscopy</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor superlattices</term><term>TEM</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>8115K</term><term>7855C</term><term>7866F</term><term>6865C</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>Méthode MOCVD</term><term>Epitaxie phase vapeur</term><term>Photoluminescence</term><term>Bande interdite</term><term>TEM</term><term>Microscopie force atomique</term><term>Antimoine</term><term>Superréseau semiconducteur</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Antimoine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Sb enhancement of lateral superlattice formation in GaInP</s1></fA08><fA11 i1="01" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (R. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>JUN (S. W.)</s1></fA11><fA11 i1="04" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (S. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>SEONG (T. Y.)</s1></fA11><fA14 i1="01"><s1>University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Kwanju Institute of Science and Technology, Kwanju 500-712, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1376-1378</s1></fA20><fA21><s1>2001-03-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0100500</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. 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